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Real-time observation of initial oxdation on highly B-doped Si(100)-2xl surfaces using scanning tunneling microscopy
Bibliographic Information
- Title
- Real-time observation of initial oxdation on highly B-doped Si(100)-2xl surfaces using scanning tunneling microscopy
- Author
- K.Ohmori, M.Tsukakoshi, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda
Journal
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- Proc.of the 25th International conference on the Physics of Semiconductors
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Proc.of the 25th International conference on the Physics of Semiconductors 329-330, 2001
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Details 詳細情報について
-
- CRID
- 1010000781757703040
-
- Article Type
- journal article
-
- Data Source
-
- KAKEN
