Real-time observation of initial oxdation on highly B-doped Si(100)-2xl surfaces using scanning tunneling microscopy
書誌事項
- タイトル
- Real-time observation of initial oxdation on highly B-doped Si(100)-2xl surfaces using scanning tunneling microscopy
- 著者
- K.Ohmori, M.Tsukakoshi, H.Ikeda, A.Sakai, S.Zaima, Y.Yasuda
収録刊行物
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- Proc.of the 25th International conference on the Physics of Semiconductors
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Proc.of the 25th International conference on the Physics of Semiconductors 329-330, 2001
