Atomic-layer-deposited silicon-nitride/SiO_2 stack - a highly potential gate dielectrics for advanced CMOS technology (Introductory Invited)
-
- NAKAJIMA Anri
- Hiroshima University, Research Center for Nanodevices and Systems, Associate Professor
Bibliographic Information
- Title
- Atomic-layer-deposited silicon-nitride/SiO_2 stack - a highly potential gate dielectrics for advanced CMOS technology (Introductory Invited)
- Author
- Anri Nakajima
Journal
-
- Microelectronics Reliability 42
-
Microelectronics Reliability 42 1823-1835, 2002
- Tweet
Details 詳細情報について
-
- CRID
- 1010000781759534728
-
- Article Type
- journal article
-
- Data Source
-
- KAKEN