High-pressure Raman study of Ba doped type III silicon clathrate Ba_<24>Si_<100> up to 27 GPa
書誌事項
- タイトル
- High-pressure Raman study of Ba doped type III silicon clathrate Ba_<24>Si_<100> up to 27 GPa
- 著者
- H.Shimizu et al.
収録刊行物
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- Phys.Rev.B 71 (No.9)
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Phys.Rev.B 71 (No.9) 2005