InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current
書誌事項
- タイトル
- InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current
- 著者
- K.Takeuchi et al.
収録刊行物
-
- Japanese Journal of Applied Physics 43
-
Japanese Journal of Applied Physics 43 2004