[Updated on Apr. 18] Integration of CiNii Articles into CiNii Research

InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current

Bibliographic Information

Title
InP Hot Electron Transistors with Emitter Mesa Fabricated between Gate Electrodes for Reduction in Emitter-Gate Gate-Leakage Current
Author
K.Takeuchi et al.

Journal

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Details

  • CRID
    1010000781805406083
  • Article Type
    journal article
  • Data Source
    • KAKEN

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