Fabrication of Pt/Sr_2(Ta_<1-x>, Nb_x)_2O_7/IrO_2/SiO_2/Si Device with Large Memory Window and Metal- Ferroelectric- Metal-Insulator-Si Field-Effect Transistor
Bibliographic Information
- Title
- Fabrication of Pt/Sr_2(Ta_<1-x>, Nb_x)_2O_7/IrO_2/SiO_2/Si Device with Large Memory Window and Metal- Ferroelectric- Metal-Insulator-Si Field-Effect Transistor
- Author
- Ichirou Takahashi, Tadahiro Ohmi, et al.
Journal
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- Japanese journal of Applied Physics Vol. 45, No. 9B
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Japanese journal of Applied Physics Vol. 45, No. 9B 7336-7340, 2006
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Details 詳細情報について
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- CRID
- 1010000781948824833
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- Article Type
- journal article
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- Data Source
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- KAKEN