High Sensitive Ultraviole PIN Photodiodes of ZnSSe n+-i-p Structure p+-GaAs with extremely thin n+-Window layer grown by MBE
Bibliographic Information
- Title
- High Sensitive Ultraviole PIN Photodiodes of ZnSSe n+-i-p Structure p+-GaAs with extremely thin n+-Window layer grown by MBE
- Author
- K.Miki、Y.Oshita、K.Ando, etal.
Journal
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- J.Korean Phys.Society 53
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J.Korean Phys.Society 53 2925-2928, 2009
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Details
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- CRID
- 1010000782044747653
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- Article Type
- journal article
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- Data Source
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- KAKEN