High Sensitive Ultraviole PIN Photodiodes of ZnSSe n+-i-p Structure p+-GaAs with extremely thin n+-Window layer grown by MBE

Bibliographic Information

Title
High Sensitive Ultraviole PIN Photodiodes of ZnSSe n+-i-p Structure p+-GaAs with extremely thin n+-Window layer grown by MBE
Author
K.Miki、Y.Oshita、K.Ando, etal.

Journal

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Details 詳細情報について

  • CRID
    1010000782044747653
  • Article Type
    journal article
  • Data Source
    • KAKEN

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