EOT of 0. 62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature
Bibliographic Information
- Title
- EOT of 0. 62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature
- Author
- T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
Journal
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- IEEE Trans. Electron Devices
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IEEE Trans. Electron Devices Vol.59 269-276, 2012
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Details 詳細情報について
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- CRID
- 1010000782065859584
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- Article Type
- journal article
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- Data Source
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- KAKEN