Reduction of threading dislocations in GaN on in-situ metlback-etched Si substrates
Bibliographic Information
- Title
- Reduction of threading dislocations in GaN on in-situ metlback-etched Si substrates
- Author
- H.Ishikawa, K.Shimanaka
Journal
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- J.Crystal Growth Vol.315
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J.Crystal Growth Vol.315 196-199, 2011
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Details 詳細情報について
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- CRID
- 1010000782095532288
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- Article Type
- journal article
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- Data Source
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- KAKEN