High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for 3D-ICs
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- 角嶋 邦之
- 東京工業大学
Bibliographic Information
- Title
- High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for 3D-ICs
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 55 2017
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Details 詳細情報について
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- CRID
- 1010000782278685213
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- Article Type
- journal article
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- Data Source
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- KAKEN