Electrotransport Properties of p-ZnSnAs2 Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates
Bibliographic Information
- Title
- Electrotransport Properties of p-ZnSnAs2 Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates
- Author
- J.T. Asubar,
Journal
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- Japanese Journal of Applied Physics 47
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Japanese Journal of Applied Physics 47 657-660, 2008
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Details 詳細情報について
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- CRID
- 1010000782474949916
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- Article Type
- journal article
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- Data Source
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- KAKEN