Electrotransport Properties of p-ZnSnAs2 Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates
書誌事項
- タイトル
- Electrotransport Properties of p-ZnSnAs2 Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates
- 著者
- J.T. Asubar,
収録刊行物
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- Japanese Journal of Applied Physics 47
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Japanese Journal of Applied Physics 47 657-660, 2008
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詳細情報
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- CRID
- 1010000782474949916
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- 資料種別
- journal article
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- データソース種別
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- KAKEN