Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer
Bibliographic Information
- Title
- Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer
- Author
- Hiroshi Nohira, Yoshinori Takenaga, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui and Hiroshi Iwai,
Journal
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- Electrochemical Society Inc., Hawai, ECS Transactions Vol. 16
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Electrochemical Society Inc., Hawai, ECS Transactions Vol. 16 171-176, 2008
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Details 詳細情報について
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- CRID
- 1010000782474974848
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- Article Type
- journal article
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- Data Source
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- KAKEN