Depth Profiles of the Fermi Level at an Amorphous-Carbon Nitride/SiO_2/n-type-Si Heterojunction Interface Obtained by Kelvin Probe Force Microscopy
Bibliographic Information
- Title
- Depth Profiles of the Fermi Level at an Amorphous-Carbon Nitride/SiO_2/n-type-Si Heterojunction Interface Obtained by Kelvin Probe Force Microscopy
- Author
- Takahiro Ishizaki, Nagahiro Saito, Riichiro Ohta, Osamu Takai
Journal
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- Diamond and Related Materials 15 (9)
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Diamond and Related Materials 15 (9) 1378-1382, 2006
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Details 詳細情報について
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- CRID
- 1010282256582653186
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- Article Type
- journal article
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- Data Source
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- KAKEN