Electron cyclotron resonance reactive ion etching of InGaAs/InAlAs/InP multilayer structure and GaN by cyclic injection of CH4/H2/Ar and 02 with constant Ar flow
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- 中野 義昭
- 東京大学
書誌事項
- タイトル
- Electron cyclotron resonance reactive ion etching of InGaAs/InAlAs/InP multilayer structure and GaN by cyclic injection of CH4/H2/Ar and 02 with constant Ar flow
- 著者
- Tomoyoshi Ide, Goh Segami, Nobuo Haneji, Taro Arakawa, Kunio Tada, Yukihiro ShimogaM, Yoshiaki Nakano
収録刊行物
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- Extended Abstracts of the 22nd Electronic Materials Symposium, Biwako, Shiga, July 2-4 B10
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Extended Abstracts of the 22nd Electronic Materials Symposium, Biwako, Shiga, July 2-4 B10 27-30, 2003