High Performance Poly-Si Device with Thin Gate Oxide Film Grown by Plasma Oxidation Technology

Bibliographic Information

Title
High Performance Poly-Si Device with Thin Gate Oxide Film Grown by Plasma Oxidation Technology
Author
F.Imaizumi, T.Hayashi, K.Ishii, A.Teramoto, M.Hirayama, S.Sugawa, T.Ohmi

Journal

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Details

  • CRID
    1010282256782080137
  • Article Type
    journal article
  • Data Source
    • KAKEN

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