High Performance Poly-Si Device with Thin Gate Oxide Film Grown by Plasma Oxidation Technology
Bibliographic Information
- Title
- High Performance Poly-Si Device with Thin Gate Oxide Film Grown by Plasma Oxidation Technology
- Author
- F.Imaizumi, T.Hayashi, K.Ishii, A.Teramoto, M.Hirayama, S.Sugawa, T.Ohmi
Journal
-
- 2003 International Conferences on Solid State Devices and Materials
-
2003 International Conferences on Solid State Devices and Materials 724-725, 2003
