High Performance Poly-Si Device with Thin Gate Oxide Film Grown by Plasma Oxidation Technology
書誌事項
- タイトル
- High Performance Poly-Si Device with Thin Gate Oxide Film Grown by Plasma Oxidation Technology
- 著者
- F.Imaizumi, T.Hayashi, K.Ishii, A.Teramoto, M.Hirayama, S.Sugawa, T.Ohmi
収録刊行物
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- 2003 International Conferences on Solid State Devices and Materials
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2003 International Conferences on Solid State Devices and Materials 724-725, 2003
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詳細情報
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- CRID
- 1010282256782080137
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- 資料種別
- journal article
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- データソース種別
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- KAKEN