[Updated on Apr. 18] Integration of CiNii Articles into CiNii Research

Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si/Si0_2 double-barrier structure

  • ISHIKAWA Yasuhiko
    The University of Tokyo, Graduate School of Engineering, Lecturer
  • IKEDA Hiroya
    Shizuoka University, Research Institute of Electronics, Associate Professor
  • TABE Michiharu
    Shizuoka University, Research Institute of Electronics, Professor

Bibliographic Information

Title
Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si/Si0_2 double-barrier structure
Author
Yasuhiko Ishikawa, Hiroya Ikeda, Michiharu Tabe

Journal

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Details

  • CRID
    1010282256851266963
  • Article Type
    journal article
  • Data Source
    • KAKEN

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