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Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si/Si0_2 double-barrier structure
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- ISHIKAWA Yasuhiko
- The University of Tokyo, Graduate School of Engineering, Lecturer
Bibliographic Information
- Title
- Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si/Si0_2 double-barrier structure
- Author
- Yasuhiko Ishikawa, Hiroya Ikeda, Michiharu Tabe
Journal
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- Applied Physics Letters 86・1
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Applied Physics Letters 86・1 2005
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Details 詳細情報について
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- CRID
- 1010282256851266963
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- Article Type
- journal article
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- Data Source
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- KAKEN