Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si/Si0_2 double-barrier structure
-
- ISHIKAWA Yasuhiko
- The University of Tokyo, Graduate School of Engineering, Lecturer
-
- IKEDA Hiroya
- Shizuoka University, Research Institute of Electronics, Associate Professor
-
- TABE Michiharu
- Shizuoka University, Research Institute of Electronics, Professor
Bibliographic Information
- Title
- Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si/Si0_2 double-barrier structure
- Author
- Yasuhiko Ishikawa, Hiroya Ikeda, Michiharu Tabe
Journal
-
- Applied Physics Letters 86・1
-
Applied Physics Letters 86・1 2005