Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si/Si0_2 double-barrier structure

Bibliographic Information

Title
Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si/Si0_2 double-barrier structure
Author
Yasuhiko Ishikawa, Hiroya Ikeda, Michiharu Tabe

Journal

Related Projects

See more

Details 詳細情報について

  • CRID
    1010282256851266963
  • Article Type
    journal article
  • Data Source
    • KAKEN

Report a problem

Back to top