Enhancement of memory retention time of metal/ferroelectric/insulator/semiconductor structure by using fast annealing and nitrogen radicalirradiation
Bibliographic Information
- Title
- Enhancement of memory retention time of metal/ferroelectric/insulator/semiconductor structure by using fast annealing and nitrogen radicalirradiation
- Author
- Van Hai, S.Nakashima, M.OkuyamaLe
Journal
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- Journal of the Korean Physical Society 55
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Journal of the Korean Physical Society 55 884-887, 2009
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Details 詳細情報について
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- CRID
- 1010282257047745819
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- Article Type
- journal article
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- Data Source
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- KAKEN