Annealing effects on a high-k lanthanum oxide film on Si (001) analyzed by aberration-corrected transmission electron microscopy/scanning transmission electron microscopy and electron energy loss spectroscopy
書誌事項
- タイトル
- Annealing effects on a high-k lanthanum oxide film on Si (001) analyzed by aberration-corrected transmission electron microscopy/scanning transmission electron microscopy and electron energy loss spectroscopy
- 著者
- S.Inamoto, J.Yamasaki, E.Okunishi, K.Kakushima, H.Iwai, N.Tanaka
収録刊行物
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- J.Appl.Phys.
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J.Appl.Phys. 107 2010
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詳細情報
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- CRID
- 1010282257077622029
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- 資料種別
- journal article
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- データソース種別
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- KAKEN