Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation
Bibliographic Information
- Title
- Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation
- Author
- N., Umezawa・K., Shiraishi・S., Sugino, et. al.
Journal
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- APPLIED PHYSICS LETTERS 91
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APPLIED PHYSICS LETTERS 91 2007
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Details 詳細情報について
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- CRID
- 1010282257417325972
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- Article Type
- journal article
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- Data Source
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- KAKEN