Tunnel magnetoresistance in GaCrN/AlN/GaCrN ferromagnetic semiconductor tunnel junctions
Bibliographic Information
- Title
- Tunnel magnetoresistance in GaCrN/AlN/GaCrN ferromagnetic semiconductor tunnel junctions
- Author
- M. S. Kim, Y. K. Zhou, M. Funakoshi, S. Emura, S. Hasegawa and H. Asahi
Journal
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- Appl. Phys. Lett 89
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Appl. Phys. Lett 89 2006
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Details
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- CRID
- 1010282257423522051
-
- Article Type
- journal article
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- Data Source
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- KAKEN