Tunnel magnetoresistance in GaCrN/AlN/GaCrN ferromagnetic semiconductor tunnel junctions
書誌事項
- タイトル
- Tunnel magnetoresistance in GaCrN/AlN/GaCrN ferromagnetic semiconductor tunnel junctions
- 著者
- M. S. Kim, Y. K. Zhou, M. Funakoshi, S. Emura, S. Hasegawa and H. Asahi
収録刊行物
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- Appl. Phys. Lett 89
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Appl. Phys. Lett 89 2006
