In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD

Bibliographic Information

Title
In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD
Author
T.Ohnishi, Y.Kirihata, H.Ohmi, H.Kakiuchi, K.Yasutake

Journal

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Details 詳細情報について

  • CRID
    1010282257438118920
  • Article Type
    journal article
  • Data Source
    • KAKEN

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