In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD
Bibliographic Information
- Title
- In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD
- Author
- T.Ohnishi, Y.Kirihata, H.Ohmi, H.Kakiuchi, K.Yasutake
Journal
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- ECS Trans. 25
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ECS Trans. 25 309-315, 2009
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Details 詳細情報について
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- CRID
- 1010282257438118920
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- Article Type
- journal article
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- Data Source
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- KAKEN