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Development of rapid crystallization technique of amorphous GeSn films at room temperature by electron beam and electrical characterization of the products
About This Project
- Japan Grant Number
- JP23K23083 (JGN)
- Funding Program
- Grants-in-Aid for Scientific Research
- Funding Organization
- Japan Society for the Promotion of Science
Kakenhi Information
- Project/Area Number
- 23K23083
- Research Category
- Grant-in-Aid for Scientific Research (B)
- Allocation Type
-
- Multi-year Fund
- Single-year Grants
- Review Section / Research Field
-
- Basic Section 26040:Structural materials and functional materials-related
- Research Institution
-
- The University of Shiga Prefecture
- Project Period (FY)
- 2022-04-01 〜 2025-03-31
- Project Status
- Granted
- Budget Amount*help
- 18,070,000 Yen (Direct Cost: 13,900,000 Yen Indirect Cost: 4,170,000 Yen)
Research Abstract
アモルファスGeSn薄膜を出発材料とし，室温で，数keV級の極めて低いエネルギーの電子ビームを照射する「非加熱方式」により，瞬間的かつ広域な結晶成長を促す．本研究では，(1)この手法の有効性を実証し，(2)瞬間結晶化（爆発的結晶化）が生じる構造的要因を明らかにし，そして，(3)得られた結晶膜の電気特性を評価する．最終年度の今年度には(3)の研究を行う．前半期にはガラスおよびポリマー基板上の薄膜において，3-10 keVの電子ビームを照射した場合に，爆発的結晶化が起こる薄膜の膜厚とエネルギー範囲の対応関係を解明する．後半期には電気特性の評価を実施する計画である．
Keywords
Details 詳細情報について
-
- CRID
- 1040299826878945664
-
- Text Lang
- ja
-
- Data Source
-
- KAKEN
