Demonstration of 15 kV 4H-SiC PiN Diodes with Improved Junction Termination Structures

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  • 接合終端構造の改良による15kV級SiC PiNダイオードの実現
  • セツゴウ シュウ タン コウゾウ ノ カイリョウ ニ ヨル 15kVキュウ SiC PiN ダイオード ノ ジツゲン

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Breakdown characteristics of 4H-SiC PiN diodes with various JTE structures have been investigated. By combining two-zone JTE and Space-Modulated JTE (SM-JTE), a breakdown voltage over 15kV have been achieved. This breakdown voltage corresponds to about 93% of the parallel-plane breakdown voltage, which is fairly high for over 10kV-class SiC diodes. The window of optimum JTE dose to obtain high breakdown voltage was widened, which indicates the robustness to the deviation of JTE dose. By comparing the JTE dose dependence of the breakdown voltage obtained from simulation and experimental results, impacts of the charge near the SiO_2/SiC interface are discussed.

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