CNFETにおけるhigh-kゲート絶縁膜界面近傍の電荷分布とその影響

鈴木, 耕佑, 大野, 雄高, 岸本, 茂, 水谷, 孝, SUZUKI, Kosuke, OHNO, Yutaka, KISHIMOTO, Shigeru, MIZUTANI, Takashi

Bibliographic Information

Other Title

Charge distribution near interface of high-k gate insulator in CNFETs

Description

We have investigated the interface charges generated at the interfaces of the gate insulator in carbon nanotube field-effect transistors (CNFETs) by Kelvin probe force microscopy. It has been found that positive charges are concentrated near the interfaces of the gate insulator with Au electrodes and with a SiO_2 substrate. We have also studied the effect of the positive interface charges on the property of CNFETs, using the device simulation. It has been revealed that the charges at the interface of the gate insulator with the Au electrodes is responsible for the change in the polarity of conduction carriers of CNFETs.

Journal

電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス

電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス 111 (426), 83-87, 2012-01

一般社団法人電子情報通信学会

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Details 詳細情報について

CRID: 1050001338804667520

NII Article ID: 10031105011

NII Book ID: AN10012954

HANDLE: 2237/23511

ISSN: 09135685

Web Site: https://nagoya.repo.nii.ac.jp/records/21367

Text Lang: ja

Article Type: journal article

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