Si量子ドット/NiSiナノドットハイブリッド積層フローティングゲートMOS構造における光励起キャリア移動

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  • Si量子ドット/NiSiナノドットハイブリッド積層フローティングゲートMOS構造における光励起キャリア移動(ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)
  • Si リョウシ ドット/NiSi ナノドットハイブリッド セキソウ フローティングゲート MOS コウゾウ ニ オケル ヒカリレイキキャリア イドウ
  • Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures

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We have studied electron transfer due to internal photoelectric emission in NiSi-Nanodots(NDs)/Si-Quantum-Dots(Si-QDs) hybrid FG structures induced by the irradiation of 1310 nm light. The flat-band voltage shift due to the charging of the hybrid FG was reduced by the light irradiation in comparison with that in the dark. The observed optical response can be interpreted in terms of the shift of the charge centroid in the hybrid FG caused by the photoexcitation of electrons in NiSi-NDs and their transfer to Si-QDs. The response of photoexcited electrons in the NiSi-NDs/Si-QDs hybrid FG to pulsed gate voltage was evaluated. The transferred charge is likely to increase in proportion to pulse gate voltage.

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