Organic field-effect transistors by a wet-transferring method

DOI IR IR IR (HANDLE) IR (HANDLE) View 1 Remaining Hide 2 Citations

Bibliographic Information

Published
2003-08-11
Resource Type
journal article
Rights Information
  • Copyright (c) 2007 American Institute of Physics.This article may be downloaded for personal use only.Any other use requires prior permission of the author and the American Institute of Physics.
DOI
  • 10.1063/1.1600518
Publisher
American Institute of Physics

Search this article

Description

Organic field-effect transistors (OFETs) were prepared from an epitaxially grown film fabricated by a wet-transferring process. 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) was grown by thermal evaporation on the (001) surface of potassium bromide (KBr) single crystals. When the film was grown at room temperature, the planar molecules were aligned orthogonally on the crystal surfaces along the [110] direction with edge-on orientation to the surface normal direction. The epitaxy film was transferred to on SiO2/Si surface immediately after removing the KBr on the water surface to product the OFETs. The calculated mu(FET) of the OFET for the wet-transferred vertically aligned film were 1.3x10(-4) and 2.2x10(-4) cm(2) V-1 s(-1) at the linear and saturation regions, respectively, at V-g=-50 V at an I-ON/I-OFF (on/off ratios of source-drain current) of 10(4)similar to10(5). (C) 2003 American Institute of Physics.

Journal

Citations (2)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top