Organic field-effect transistors by a wet-transferring method

DOI 機関リポジトリ 機関リポジトリ 機関リポジトリ (HANDLE) 機関リポジトリ (HANDLE) ほか1件をすべて表示 一部だけ表示 被引用文献2件

書誌事項

公開日
2003-08-11
資源種別
journal article
権利情報
  • Copyright (c) 2007 American Institute of Physics.This article may be downloaded for personal use only.Any other use requires prior permission of the author and the American Institute of Physics.
DOI
  • 10.1063/1.1600518
公開者
American Institute of Physics

この論文をさがす

説明

Organic field-effect transistors (OFETs) were prepared from an epitaxially grown film fabricated by a wet-transferring process. 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) was grown by thermal evaporation on the (001) surface of potassium bromide (KBr) single crystals. When the film was grown at room temperature, the planar molecules were aligned orthogonally on the crystal surfaces along the [110] direction with edge-on orientation to the surface normal direction. The epitaxy film was transferred to on SiO2/Si surface immediately after removing the KBr on the water surface to product the OFETs. The calculated mu(FET) of the OFET for the wet-transferred vertically aligned film were 1.3x10(-4) and 2.2x10(-4) cm(2) V-1 s(-1) at the linear and saturation regions, respectively, at V-g=-50 V at an I-ON/I-OFF (on/off ratios of source-drain current) of 10(4)similar to10(5). (C) 2003 American Institute of Physics.

収録刊行物

被引用文献 (2)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ