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説明
Organic field-effect transistors (OFETs) were prepared from an epitaxially grown film fabricated by a wet-transferring process. 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) was grown by thermal evaporation on the (001) surface of potassium bromide (KBr) single crystals. When the film was grown at room temperature, the planar molecules were aligned orthogonally on the crystal surfaces along the [110] direction with edge-on orientation to the surface normal direction. The epitaxy film was transferred to on SiO2/Si surface immediately after removing the KBr on the water surface to product the OFETs. The calculated mu(FET) of the OFET for the wet-transferred vertically aligned film were 1.3x10(-4) and 2.2x10(-4) cm(2) V-1 s(-1) at the linear and saturation regions, respectively, at V-g=-50 V at an I-ON/I-OFF (on/off ratios of source-drain current) of 10(4)similar to10(5). (C) 2003 American Institute of Physics.
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 83 (6), 1243-1245, 2003-08-11
American Institute of Physics
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詳細情報 詳細情報について
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- CRID
- 1050001338910681600
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- NII論文ID
- 120002441364
- 120002440760
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- NII書誌ID
- AA00543431
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- ISSN
- 10773118
- 00036951
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- HANDLE
- 10228/2323
- 10228/580
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB
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