GaAs (001) 表面における塩化メチル分子の吸着過程
書誌事項
- タイトル別名
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- Adsorption of Methylchloride Molecule on GaAs(001)-2x4 Surface
- GaAs 001 ヒョウメン ニ オケル エンカ メチル ブンシ ノ キュウチャク カテイ
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説明
Abstract Adsorption process of methylchloride (CH3Cl) on GaAs(OO1) surface was studied by a scanning tunneling microscopy (STM) measurement. The arsenic rich 2x4 surface, which was prepared by molecular beam epitaxy (MBE), was exposed by CH3Cl at room temperature. A Iarge amount of adsorbates were observed in the STM image. It was suggested that CH3Cl molecule was preferentially adsorbed on B step on GaAs(OO1)-2x4 surface. The adsorption of CH3Cl molecule was also studied by ACF Hatree-Fock calculation, which well explained the CH3Cl adsorption model.
収録刊行物
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- 宮崎大学工学部紀要
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宮崎大学工学部紀要 35 53-58, 2006-08-30
宮崎大学工学部
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詳細情報 詳細情報について
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- CRID
- 1050007314766190336
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- NII論文ID
- 110005001882
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- NII書誌ID
- AA00732558
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- ISSN
- 05404924
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- HANDLE
- 10458/413
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- NDL書誌ID
- 8567842
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- 本文言語コード
- ja
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- 資料種別
- departmental bulletin paper
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- データソース種別
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