書誌事項
- タイトル別名
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- A Study of the Recombination Process at the p-n Junction Interface by the Photoexcited-Carrier-Concentration Controlled Piezoelectric Photothermal Method
- ヒカリ レイキ キャリアスウ オ セイギョ シタ アツデン ソシ コウネツ ヘンカン ブンコウホウ ニ ヨル ハンドウタイ p n セツゴウ カイメン ノ ケンキュウ
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It is important to control the carrier dynamics at p-n junction interface for high efficiency solar cells. In this study, the signal generation mechanisms of the Surface Photo-Voltage (SPV) and Piezoelectric Photo-Thermal (PPT) signals of Si p-n junction have investigated by using the photoexcited-carrier-concentration controlled incident light. Since the carrier accumulation (= SPV) and the recombination phenomenon (= PPT) are complementary, SPV and PPT should shows a peak and a dip, respectively. However, at hv = 1.30 eV, both SPV and PPT showed peaks. This was concluded that the PPT increased by a thermodynamic energy loss with phonon emitting within the conduction and valence bands.
収録刊行物
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- 宮崎大学工学部紀要
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宮崎大学工学部紀要 39 15-18, 2010-09-30
宮崎大学工学部
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詳細情報 詳細情報について
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- CRID
- 1050007314771909760
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- NII論文ID
- 110008658989
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- NII書誌ID
- AA00732558
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- ISSN
- 05404924
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- HANDLE
- 10458/3187
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- NDL書誌ID
- 10837811
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- 本文言語コード
- ja
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- 資料種別
- departmental bulletin paper
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- データソース種別
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- IRDB
- NDL
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