Model of the Light-Induced Defect Creation in Hydrogenated Amorphous Silicon

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A previous model that prolonged illumination creates two types of dangling bonds, i.e., normal dangling bonds and hydrogen-related dangling bonds (dangling bonds having hydrogen at a nearby site) is modified by taking into account recent observations in a-Si:H, particularly on diffusion of hydrogen dissociated from a Si-H bond by nonradiative recombination at hydrogenrelated dangling bonds and intradistance within a close pair of two types of dangling bonds.

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