In situ electrical monitoring of SiO₂/Si structures in low-temperature plasma using impedance spectroscopy

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説明

To investigate the electrical properties and degradation features of dielectric materials during plasma exposure, we developed an in situ impedance spectroscopy (IS) system. We applied the proposed system to monitor SiO₂/Si structures exposed to Ar plasma. By analyzing the measured data based on an equivalent circuit model considering the plasma and SiO₂/Si structures, we obtained the resistance (R) and capacitance (C) values for the SiO₂ film and SiO₂/Si interface. In a cyclic experiment of in situ IS and high-energy ion irradiation, we characterized dielectric degradation by ion irradiation based on the variations in the R and C values of the SiO₂ film. A continuous in situ IS measurement revealed temporal variations in the electrical properties of the film and interface independently. The thickness-dependent degradation observed for the RC variation was analyzed and compared with the results of previous ex situ measurement studies. This study demonstrates that the in situ IS measurement technique is promising for monitoring plasma-assisted dry processes.

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詳細情報 詳細情報について

  • CRID
    1050015333085637248
  • ISSN
    13474065
    00214922
  • HANDLE
    2433/284020
  • 本文言語コード
    en
  • 資料種別
    journal article
  • データソース種別
    • IRDB
    • OpenAIRE

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