Neutral Hydrogen Atom Generation by Surface Wave Excitation Plasma and Its Application to Resist Ashing
Bibliographic Information
- Other Title
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- 表面波励起プラズマによる中性水素原子生成とレジストアッシングへの応用
- ヒョウメンハレイキプラズマ ニ ヨル チュウセイ スイソ ゲンシ セイセイ ト レジストアッシング エ ノ オウヨウ
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Abstract
High density plasma is required for plasma processing in future ULSI fabrication. In this study, 2.45 GHz microwave of the TM01 mode in the circular wave guide was introduced through a dielectric disk plate window for generation of excited surface wave plasma. A high dose ion implanted resist ashing is performed using this apparatus. In the temperature rangeof 60 to 150 ℃, ashing rate for neutral hydrogen irradiation is higher than that of oxygen plasma. The results indicate that resist removal by hydrogen atoms is advantageous to enableto oxygen free and low temperature ashing.
Journal
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- Memoirs of the Muroran Institute of Technology
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Memoirs of the Muroran Institute of Technology 54 29-35, 2004-11
室蘭工業大学
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Details 詳細情報について
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- CRID
- 1050282676663930496
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- NII Article ID
- 10018233230
- 110001263633
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- NII Book ID
- AA11912609
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- HANDLE
- 10258/62
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- NDL BIB ID
- 7178402
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- ISSN
- 13442708
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- Text Lang
- ja
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- Article Type
- departmental bulletin paper
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- Data Source
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- IRDB
- NDL
- CiNii Articles