Degradation of interface integrity between a high-k dielectric thin film and a gate electrode due to excess oxygen in the film
Description
application/pdf
学術論文 (Article)
IEEE CFP09RPS-CDR 47th Annual International Reliability Physics Symposium, Montreal, 2009
1085536 bytes
Journal
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- IEEE International Reliability Physics Symposium, 2009, 47th
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IEEE International Reliability Physics Symposium, 2009, 47th 2009 376-381, 2009
Institute of Electrical and Electronics Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1050282677703866624
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- HANDLE
- 10097/46403
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- Text Lang
- en
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- Article Type
- journal article
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- Data Source
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- IRDB
- Crossref
- OpenAIRE