Electron mobility exceeding 104cm2/Vs in an AlGaN-GaN heterostructure grown on a sapphire substrate
Abstract
学術論文 (Article)
Journal
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- Applied Physics Letters
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Applied Physics Letters 74 (23), 3531-3533, 1999
American Institute of Physics
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Details 詳細情報について
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- CRID
- 1050282677719830400
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- NII Article ID
- 80011123451
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- ISSN
- 00036951
- 10773118
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- DOI
- 10.1063/1.124151
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- HANDLE
- 10097/51780
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- Text Lang
- en
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- Article Type
- journal article
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- Data Source
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- IRDB
- Crossref
- CiNii Articles
