Electron mobility exceeding 104cm2/Vs in an AlGaN-GaN heterostructure grown on a sapphire substrate

Details 詳細情報について

• CRID

  1050282677719830400

• NII Article ID

  80011123451

• ISSN

  00036951

  10773118

• DOI

  10.1063/1.124151

• HANDLE

  10097/51780

• Web Site

  https://tohoku.repo.nii.ac.jp/records/47810

  https://pubs.aip.org/aip/apl/article-pdf/74/23/3531/18542055/3531_1_online.pdf

• Text Lang

  en

• Article Type

  journal article

• Data Source

  • IRDB
  • Crossref
  • CiNii Articles
  • OpenAIRE