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Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure by inserting a strained InAs quantum well
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Description
学術論文 (Article)
Journal
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- Applied Physics Letters
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Applied Physics Letters 65 (10), 1263-1265, 1994
American Institute of Physics
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Details 詳細情報について
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- CRID
- 1050282677723618432
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- ISSN
- 00036951
- 10773118
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- DOI
- 10.1063/1.112089
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- HANDLE
- 10097/51587
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- Text Lang
- en
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- Article Type
- journal article
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- Data Source
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- IRDB
- Crossref
- OpenAIRE