AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
Abstract
学術論文 (Article)
Journal
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- Journal of Applied Physics
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Journal of Applied Physics 107 (2), 024504-, 2010
American Institute of Physics
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Details 詳細情報について
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- CRID
- 1050282677724330752
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- ISSN
- 00218979
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- HANDLE
- 10097/52407
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- Text Lang
- en
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- Article Type
- journal article
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- Data Source
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- IRDB