Fabrication of Ultrahigh-Voltage SiC PiN Diodes with Low On-Resistance

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  • 超高耐圧 SiC PiN ダイオードの作製と低オン抵抗化
  • チョウコウタイアツ SiC PiN ダイオード ノ サクセイ ト テイオン テイコウカ

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Designing of edge termination structure is an essential technique to realize ultrahigh-voltage SiC bipolar devices. In this study, we have designed edge termination by device simulation, especially Space-Modulated Junction Termination Extension (SM-JTE) structure that our group proposed. With the designed SM-JTE, we have fabricated SiC PiN diodes with over 17 kV breakdown voltages in wider range of JTE dose, which indicates SM-JTE is a promising edge termination structure to realize ultrahigh-voltage SiC bipolar devices. Furthermore, by performing lifetime enhancement process via thermal oxidation, we have demonstrated drastic improvement of the on-state voltage drop and the differential on-resistance of the PiN diodes.

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