次世代素子、Si 共鳴トンネルMOS トランジスタの提案及び理論検討
書誌事項
- タイトル別名
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- Si Resonant Tunneling MOS Transistor (SRTMOST) for Next Generation
- ジセダイ ソシ Si キョウメイ トンネル MOS トランジスタ ノ テイアン オヨビ リロン ケントウ
説明
The characteristics of the Si resonant tunneling metal-oxide-semiconductor transistor (SRTMOST), which was proposed to realize a low-power and high-speed characteristics, were reviewed. From the discussion related to the suppression of the DT from the source to the drain under the gate-off condition, the excellent switching operation, the optimum off-set energy between the dielectric films at the both channel edges and Si and the feasibility of the three-valued logic circuit, it is shown that the SRTMOST would become the potential candidate of the substitution for the conventional metal-oxide-semiconductor field-effect transistor (MOSFET) in the next generation.
収録刊行物
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- 山口大学工学部研究報告
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山口大学工学部研究報告 53 (2), 123-131, 2003-03
山口大学工学部
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詳細情報 詳細情報について
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- CRID
- 1050282812431149056
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- NII論文ID
- 120000863403
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- 本文言語コード
- ja
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- 資料種別
- departmental bulletin paper
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- データソース種別
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- IRDB
- CiNii Articles
