Low temperature (210°C) fabrication of Ge MOS capacitor and controllability of its flatband voltage

Kuwazuru, Hajime, Aso, Taisei, Wang, Dong, Yamamoto, Keisuke

Germanium (Ge) and germanium tin (GeSn) are strong candidate materials for novel electronic device such as spin MOS field-effect transistor (FET) or flexible devices. A high-quality insulating layer on Ge(Sn) should be formed at low temperatures to realize these applications. In this study, we fabricated a Ge MOS capacitor (CAP) and n-MOSFET with a SiO_2/GeO_2 gate dielectric using an electron cyclotron resonance plasma process and subsequent post-deposition annealing at a low temperature of 210 °C. The MOSCAPs show the typical electrical characteristics without significant degradation compared with the samples fabricated at a higher temperature of 450 °C. The n-MOSFET shows distinct output characteristics with clear saturation behavior and high current drivability. From the flatband voltage comparison among different annealing temperatures, high-temperature annealing induces the interface dipole formation in the gate insulator, significantly shifting flatband voltage to a negative direction. X-ray photoelectron spectroscopy analysis suggests that the origin of the interface dipole is oxygen atom movement at a SiO_2/GeO_2 interface. This information will be an important guideline for fabricating a high-quality insulator on Ge(Sn) at low temperatures.

Low temperature (210°C) fabrication of Ge MOS capacitor and controllability of its flatband voltage

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