Low temperature (210°C) fabrication of Ge MOS capacitor and controllability of its flatband voltage

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説明

Germanium (Ge) and germanium tin (GeSn) are strong candidate materials for novel electronic device such as spin MOS field-effect transistor (FET) or flexible devices. A high-quality insulating layer on Ge(Sn) should be formed at low temperatures to realize these applications. In this study, we fabricated a Ge MOS capacitor (CAP) and n-MOSFET with a SiO_2/GeO_2 gate dielectric using an electron cyclotron resonance plasma process and subsequent post-deposition annealing at a low temperature of 210 °C. The MOSCAPs show the typical electrical characteristics without significant degradation compared with the samples fabricated at a higher temperature of 450 °C. The n-MOSFET shows distinct output characteristics with clear saturation behavior and high current drivability. From the flatband voltage comparison among different annealing temperatures, high-temperature annealing induces the interface dipole formation in the gate insulator, significantly shifting flatband voltage to a negative direction. X-ray photoelectron spectroscopy analysis suggests that the origin of the interface dipole is oxygen atom movement at a SiO_2/GeO_2 interface. This information will be an important guideline for fabricating a high-quality insulator on Ge(Sn) at low temperatures.

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詳細情報 詳細情報について

  • CRID
    1050302315064601984
  • NII書誌ID
    AA11350145
  • ISSN
    18734081
    13698001
  • HANDLE
    2324/7324199
  • 本文言語コード
    en
  • 資料種別
    journal article
  • データソース種別
    • IRDB

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