Fabrication and characterization of field-effect transistor device with C_<2v> isomer of Pr@C_<82>
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- タイトル別名
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- Fabrication and characterization of field-effect transistor device with C<sub>2v</sub> isomer of Pr@C<sub>82</sub>
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<p>A field-effect transistor (FET) device was fabricated with thin films of C2v isomer of Pr@C82. This device apparently showed n-channel normally-on type FET properties, where non-zero current was observed at gate-source voltage of 0 VGS, of 0V. Normally off FET properties were observed by subtraction of the non-zero current from the drain current.Thus the normally on properties are ascribed to the high bulk current caused by the small energy gap ≈0.3 eV. The field-effect mobility for this FET was 1.5 x 10-4 cm2 V-1 s-1 at 320 K, being comparable to those of other endohedral metallofullerene FET devices.</p>
収録刊行物
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- Chemical Physics Letters
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Chemical Physics Letters 409 (4-6), 187-191, 2005-06-30
Elsevier Science B.V.
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詳細情報 詳細情報について
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- CRID
- 1050002212698441600
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- NII論文ID
- 120000861717
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- NII書誌ID
- AA00602122
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- ISSN
- 00092614
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB
- CiNii Articles