GaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets
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抄録
GaAs-based nanowire devices having multiple asymmetric gates for electrical Brownian ratchets were fabricated and characterized. From three-dimensional potential simulation results and current–voltage characteristics, we confirmed the formation of the asymmetric potential in our device design. Direct current was generated at room temperature by repeatedly switching the potential in a multiple-asymmetric-gate device on and off. Such current was not observed in either a single-asymmetric-gate device or a multiple-symmetric-gate device. The current direction and input frequency dependences of the net current indicated that the observed current was generated by the flashing-ratchet mechanism.
収録刊行物
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- Japanese Journal of Applied Physics(JJAP)
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Japanese Journal of Applied Physics(JJAP) 52 (6), 06-, 2013-06
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1050564288977437824
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- NII論文ID
- 120006324923
- 40019677754
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- NII書誌ID
- AA12295836
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- ISSN
- 13474065
- 00214922
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- HANDLE
- 2115/66636
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- NDL書誌ID
- 024643865
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- 本文言語コード
- en
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- 資料種別
- journal article
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- データソース種別
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- IRDB
- NDL
- CiNii Articles