The layer thickness dependence of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition evaluated by Raman scattering method

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  • ラマン散乱法を用いた有機金属気相成長法で作製したInAs/GaSb超格子の層厚依存性の評価

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Abstract

InAs/GaSb superlattices(SL) with systematic change of layer thickness grown by metalorganic chemical vapor deposition analyzed by Raman scattering method. As a result, a change in the peak shape of the Raman spectrum was observed in the superlattices having different film thicknesses. In the InAs/GaSb superlattices, a peak due to Ga-As atomic bonds that does not exist as a composition of SL was confirmed. When the layer thickness was smaller, the degree of mixing of As into the GaSb layer increased due to the influence of the residual gas.

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