書誌事項
- タイトル別名
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- The layer thickness dependence of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition evaluated by Raman scattering method
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抄録
InAs/GaSb superlattices(SL) with systematic change of layer thickness grown by metalorganic chemical vapor deposition analyzed by Raman scattering method. As a result, a change in the peak shape of the Raman spectrum was observed in the superlattices having different film thicknesses. In the InAs/GaSb superlattices, a peak due to Ga-As atomic bonds that does not exist as a composition of SL was confirmed. When the layer thickness was smaller, the degree of mixing of As into the GaSb layer increased due to the influence of the residual gas.
収録刊行物
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- 宮崎大学工学部紀要
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宮崎大学工学部紀要 49 69-72, 2020-09
宮崎大学工学部
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詳細情報 詳細情報について
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- CRID
- 1050570264722343808
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- NII論文ID
- 120007120323
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- NII書誌ID
- AA00732558
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- ISSN
- 05404924
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- HANDLE
- 10458/00010075
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- 本文言語コード
- ja
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- 資料種別
- departmental bulletin paper
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- データソース種別
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- IRDB
- CiNii Articles