- 【Updated on May 12, 2025】 Integration of CiNii Dissertations and CiNii Books into CiNii Research
- Trial version of CiNii Research Automatic Translation feature is available on CiNii Labs
- Suspension and deletion of data provided by Nikkei BP
- Regarding the recording of “Research Data” and “Evidence Data”
Heteroepitaxial growth of β-Ga_2O_3 thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering
-
- Kusaba, Takafumi
- Department of Advanced Energy Science and Engineering, Kyushu University
-
- Sittimart, Phongsaphak
- Department of Advanced Energy Science and Engineering, Kyushu University Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
-
- Katamune, Yuki
- Department of Electrical and Electronic Engineering, Kyushu Institute of Technology
-
- Kageura, Taisuke
- Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
-
- Naragino, Hiroshi
- Department of Advanced Energy Science and Engineering, Kyushu University
-
- Ohmagari, Shinya
- Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
-
- Sreenath Mylo Valappil
- Department of Advanced Energy Science and Engineering, Kyushu University
-
- Nagano, Satoki
- Department of Advanced Energy Science and Engineering, Kyushu University
-
- Zkria, Abdelrahman
- Department of Physics, Faculty of Science, Aswan University Center for Japan-Egypt Cooperation in Science and Technology (E-JUST Center)
-
- Yoshitake, Tsuyoshi
- Department of Advanced Energy Science and Engineering, Kyushu University
Search this article
Description
In this work, we demonstrate the first achievement in heteroepitaxial growth of β-Ga_2O_3 thin films on single crystalline diamond (111) wafers using RF magnetron sputtering. A single monoclinic (β-phase) structure with a monofamily {2^^-01} plane was obtained. XRD pole figure shows (2^^-02) and (002) textures of the (2^^-01) β-Ga_2O_3 plane parallel to (111) diamond with six distinct rotational domains, confirming successful epitaxial growth. Collectively, this research provides valuable insights into the epitaxial growth of β-Ga_2O_3 on diamond via sputtering, paving the way for scalable β-Ga_2O_3/diamond heterostructures for future electronic and optoelectronic applications with not only high performance but also effective self-thermal management.
Journal
-
- Applied Physics Express
-
Applied Physics Express 16 (10), 105503-, 2023-10-09
IOP Publishing
- Tweet
Details 詳細情報について
-
- CRID
- 1050582462796089600
-
- NII Book ID
- AA12295133
-
- ISSN
- 18820786
- 18820778
-
- HANDLE
- 2324/7183508
-
- Text Lang
- en
-
- Article Type
- journal article
-
- Data Source
-
- IRDB