Heteroepitaxial growth of β-Ga_2O_3 thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering

IR (HANDLE) Open Access
  • Kusaba, Takafumi
    Department of Advanced Energy Science and Engineering, Kyushu University
  • Sittimart, Phongsaphak
    Department of Advanced Energy Science and Engineering, Kyushu University Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
  • Katamune, Yuki
    Department of Electrical and Electronic Engineering, Kyushu Institute of Technology
  • Kageura, Taisuke
    Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
  • Naragino, Hiroshi
    Department of Advanced Energy Science and Engineering, Kyushu University
  • Ohmagari, Shinya
    Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
  • Sreenath Mylo Valappil
    Department of Advanced Energy Science and Engineering, Kyushu University
  • Nagano, Satoki
    Department of Advanced Energy Science and Engineering, Kyushu University
  • Zkria, Abdelrahman
    Department of Physics, Faculty of Science, Aswan University Center for Japan-Egypt Cooperation in Science and Technology (E-JUST Center)
  • Yoshitake, Tsuyoshi
    Department of Advanced Energy Science and Engineering, Kyushu University

Search this article

Description

In this work, we demonstrate the first achievement in heteroepitaxial growth of β-Ga_2O_3 thin films on single crystalline diamond (111) wafers using RF magnetron sputtering. A single monoclinic (β-phase) structure with a monofamily {2^^-01} plane was obtained. XRD pole figure shows (2^^-02) and (002) textures of the (2^^-01) β-Ga_2O_3 plane parallel to (111) diamond with six distinct rotational domains, confirming successful epitaxial growth. Collectively, this research provides valuable insights into the epitaxial growth of β-Ga_2O_3 on diamond via sputtering, paving the way for scalable β-Ga_2O_3/diamond heterostructures for future electronic and optoelectronic applications with not only high performance but also effective self-thermal management.

Journal

Related Projects

See more

Details 詳細情報について

  • CRID
    1050582462796089600
  • NII Book ID
    AA12295133
  • ISSN
    18820786
    18820778
  • HANDLE
    2324/7183508
  • Text Lang
    en
  • Article Type
    journal article
  • Data Source
    • IRDB

Report a problem

Back to top