Heteroepitaxial growth of β-Ga_2O_3 thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering

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説明

In this work, we demonstrate the first achievement in heteroepitaxial growth of β-Ga_2O_3 thin films on single crystalline diamond (111) wafers using RF magnetron sputtering. A single monoclinic (β-phase) structure with a monofamily {2^^-01} plane was obtained. XRD pole figure shows (2^^-02) and (002) textures of the (2^^-01) β-Ga_2O_3 plane parallel to (111) diamond with six distinct rotational domains, confirming successful epitaxial growth. Collectively, this research provides valuable insights into the epitaxial growth of β-Ga_2O_3 on diamond via sputtering, paving the way for scalable β-Ga_2O_3/diamond heterostructures for future electronic and optoelectronic applications with not only high performance but also effective self-thermal management.

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詳細情報 詳細情報について

  • CRID
    1050582462796089600
  • NII書誌ID
    AA12295133
  • ISSN
    18820786
    18820778
  • HANDLE
    2324/7183508
  • 本文言語コード
    en
  • 資料種別
    journal article
  • データソース種別
    • IRDB

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