Formation of p-n^+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation

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  • Formation of p-n<sup>+</sup>diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation

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We report the fabrication of p-n^+ diamond homojunction through an innovative approach of laser irradiation in liquid-ambient. A shallow phosphorus-doped layer with a high electric conductivity is processed on top of a p-type diamond substrate to form the p-n^+ homojunction. The current–voltage measurements at room temperature confirmed high conductivity of the induced n^+ layer and showed exceptional rectification properties with an ideality factor of 1.07, excellent low on-resistance of 3.7 × 10^<−2> Ωcm^2, and current density over 260 Acm^<−2> at forward-biasing of 10 V. Furthermore, undetectable leakage-current provides a rectification ratio exceeding 10^<10> at ±6 V, promoting the junction in UV detection applications.

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