Formation of p-n<sup>+</sup>diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation

DOI DOI DOI 機関リポジトリ (HANDLE) Web Site 参考文献49件 オープンアクセス

書誌事項

タイトル別名
  • Formation of p-n^+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation

説明

We report the fabrication of p-n^+ diamond homojunction through an innovative approach of laser irradiation in liquid-ambient. A shallow phosphorus-doped layer with a high electric conductivity is processed on top of a p-type diamond substrate to form the p-n^+ homojunction. The current–voltage measurements at room temperature confirmed high conductivity of the induced n^+ layer and showed exceptional rectification properties with an ideality factor of 1.07, excellent low on-resistance of 3.7 × 10^<−2> Ωcm^2, and current density over 260 Acm^<−2> at forward-biasing of 10 V. Furthermore, undetectable leakage-current provides a rectification ratio exceeding 10^<10> at ±6 V, promoting the junction in UV detection applications.

収録刊行物

参考文献 (49)*注記

もっと見る

関連プロジェクト

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ